savantic semiconductor product specification silicon npn power transistors bdv67/67a/67b/67c/67d description with to-3pn package complement to type bdv66/66a/66b/66c/66d darlington high dc current gain applications for use in audio output stages and general amplifier and switching applications. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit bdv67 80 bdv67a 100 bdv67b 120 BDV67C 140 v cbo collector-base voltage bdv67d open emitter 160 v bdv67 60 bdv67a 80 bdv67b 100 BDV67C 120 v ceo collector-emitter voltage bdv67d open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current 16 a i cm collector current-peak 20 a i b base current 0.5 a p c collector power dissipation t c =25 200 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors bdv67/67a/67b/67c/67d characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit bdv67 60 bdv67a 80 bdv67b 100 BDV67C 120 v (br)ceo collector-emitter breakdown voltage bdv67d i c =30ma, i b =0 150 v v cesat collector-emitter saturation voltage i c =10a ,i b =40ma 2.0 v v be base-emitter on voltage i c =10a ; v ce =3v 2.5 v i cbo collector cut-off current v cb =v cbomax , i e =0 v cb =1/2v cbomax; t j =150 1.0 4.0 ma i ceo collector cut-off current v ce =1/2v ceomax , i b =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 5 ma h fe-1 dc current gain i c =1a ; v ce =3v 3000 h fe-2 dc current gain i c =10a ; v ce =3v 1000 h fe-3 dc current gain i c =16a ; v ce =3v 1000 c c collector capacitance i e =0 ; v cb =10v;f=1mhz 300 pf v f diode forward voltage i e =10a 3.0 v t on turn-on time 1.0 s t off turn-off time i c = 10 a, i b1 =-i b2 =40 ma v cc = 12v 3.5 s thermal characteristics symbol parameter max unit r th j-mb thermal resistance junction to mounting base 0.625 k/w
savantic semiconductor product specification 3 silicon npn power transistors bdv67/67a/67b/67c/67d package outline fig.2 outline dimensions(unindicated tolerance: 0.1mm)
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